MIRROR PASSIVATION OF INGAAS LASERS

Authors
DUTTA NK HOBSON WS ZYDZIK GJ DEJONG JF PARAYANTHAL P PASSLACK M CHAKRABARTI UK
Citation
Nk. Dutta et al., MIRROR PASSIVATION OF INGAAS LASERS, Electronics Letters, 33(3), 1997, pp. 213-214
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
3
Year of publication
1997
Pages
213 - 214
Database
ISI
SICI code
0013-5194(1997)33:3<213:MPOIL>2.0.ZU;2-W
Abstract
The authors report a mirror passivation technique for high power 980 n m lasers. The technique involves depositing a film of gallium oxide on the facet immediately after facet cleaving. Photoluminescence measure ments show that the GaAs surface covered with in situ deposited galliu m oxide has two orders of magnitude higher luminescence than that for bare GaAs surface. Lasers with good aging characteristics have been fa bricated.