ANALYTICAL MODELING OF THERMALLY-ACTIVATED TRANSPORT IN SIC INVERSION-LAYERS

Authors
BANO E OUISSE T SCHARNHOLZ SP GOLZ A VONKAMIENSKI EGS
Citation
E. Bano et al., ANALYTICAL MODELING OF THERMALLY-ACTIVATED TRANSPORT IN SIC INVERSION-LAYERS, Electronics Letters, 33(3), 1997, pp. 243-245
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
3
Year of publication
1997
Pages
243 - 245
Database
ISI
SICI code
0013-5194(1997)33:3<243:AMOTTI>2.0.ZU;2-I
Abstract
When the conductivity of a silicon carbide (SIG) inversion layer is th ermally activated it is confirmed that the activation energy controlli ng transport is almost inversely proportional to the electron concentr ation. Simple formulas are then derived for expressing the apparent su rface mobility and the threshold voltage. The mobility is proportional to the temperature.