QUANTUM-CONFINED STARK-EFFECT IN GAINASSB ALGAASSB QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY/

Authors
SHI Y ZHAO JH SARATHY J OLSEN G LEE H
Citation
Y. Shi et al., QUANTUM-CONFINED STARK-EFFECT IN GAINASSB ALGAASSB QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY/, Electronics Letters, 33(3), 1997, pp. 248-250
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
3
Year of publication
1997
Pages
248 - 250
Database
ISI
SICI code
0013-5194(1997)33:3<248:QSIGAQ>2.0.ZU;2-J
Abstract
The quantum confined Stark effect in GaInAsSb/AlGaAsSb strain compensa ted multiquantum well structures grown by molecular beam epitaxy on Ga Sb substrates has been successfully demonstrated for the first time. A large absorption peak shift up to 80 nm was observed. The excitonic a bsorption peak shifts agree well with the calculated results.