Crystallization of ternary amorphous Ni-Y-Al films observed by scanning tunneling microscopy

Citation
Dl. Wang et al., Crystallization of ternary amorphous Ni-Y-Al films observed by scanning tunneling microscopy, CHIN PHYS L, 15(12), 1998, pp. 901-903
Citations number
17
Categorie Soggetti
Physics
Journal title
CHINESE PHYSICS LETTERS
ISSN journal
0256307X → ACNP
Volume
15
Issue
12
Year of publication
1998
Pages
901 - 903
Database
ISI
SICI code
0256-307X(1998)15:12<901:COTANF>2.0.ZU;2-E
Abstract
Ternary thin Ni90-xYxAl10 films have been prepared by using cocondensation method under ultrahigh vacuum condition. Films with a wide concentration ra nge between Ni80Y10Al10 and Ni20Y70Al10 were found to be amorphous. With an addition of 10 at.% Al the thermal stability of binary amorphous NiY has b een enhanced. This is caused by a more closely packed structure and the bon dings between Al and Ni, Y may also play an important role. The surface inv estigation by scanning tunneling microscopy suggests that the atom redistri bution and the crystallization have been limited in the clusters with a siz e of about 10.5 nm. The nanosized amorphous clusters of Ni80Y10Al10 film ha ve changed to nanosized crystalline with the same size of about 12.3 nm whe n crystallization occurred.