Reaction processes at the initial stage of diamond nucleation on the surface of Si(111)

The thermal behavior of CHx(x=2,3) radicals and H atoms adsorbed on Si (111 ) surface was investigated by high-resolution electron-energy-loss spectros copy, quadrupole mass spectrometry, and low-energy electron diffraction. Ba sed on the analysis of thermal desorption mass spectrometry, the initial st age of diamond nucleation on Si is speculated. Compared with the result rep orted by Lee for diamond, it is concluded that low stability of hydrocarbon species on Si is the basic reason which results in the difficulty of diamo nd nucleation on perfect Si surface.