IMPACT OF HYDROGENATING PLASMA-INDUCED OXIDE CHARGING EFFECTS ON THE CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS

The impact of electrostatic charging damage on the characteristics and gate oxide integrity of polysilicon thin film transistors (TFTs) duri ng plasma hydrogenation were investigated. Hydrogen atoms passivate tr ap states in the polysilicon channel; however, plasma processing induc ed electrostatic charging effects damage the gate oxide and the oxide/ channel interface. The passivation effect of hydrogen atoms is antagon ized by the generation of interface states. TFTs with different areas of antennas were used to study the damage caused by electrostatic fiel ds. Oxide charging damage during plasma hydrogenation also seriously d egrades the integrity of the gate oxide and the channel/oxide interfac e.