NONEQUILIBRIUM CARRIER TRANSPORT IN III-V COMPOUNDS AT LOW LATTICE TEMPERATURES

The effect of finite energy of the deformation potential and piezoelec tric acoustic phonons on the electric field dependence of the effectiv e temperature of the nonequilibrium carriers in n-type InSb and InAs h as been calculated here by a numerical method for low lattice temperat ures taking the nonparabolicity of the conduction band into account. U nlike the traditional method of neglecting the phonon energy in compar ison to the carrier energy the calculations are carried out here under the condition that the acoustic phonon energy can neither be neglecte d nor the phonon distribution be represented by the equipartition law. The results are significantly different from those that follow from t he traditional approach and are found to be in good agreement with the experimental data.