The fabrication and characterisation of an 8 x 8 Schottky barrier phot
odiode array on GaN, with pixel size of 200 x 200 mu m, are reported.
This array shows an average peak response of 0.05A/W and sharp cutoff
at 360nm. Decay time measurements reveal the response to be RC-limited
with a time constant of 50ns. The visible-blind UV-imaging capability
of the GaN photodiode array is also demonstrated for the first time.