COLLECTOR-UP INGAP GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGH F(MAX)/

Authors
HENKEL A DELAGE SL DIFORTEPOISSON MA CHARTIER E BLANCK H HARTNAGEL HL
Citation
A. Henkel et al., COLLECTOR-UP INGAP GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGH F(MAX)/, Electronics Letters, 33(7), 1997, pp. 634-636
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
7
Year of publication
1997
Pages
634 - 636
Database
ISI
SICI code
0013-5194(1997)33:7<634:CIGDBW>2.0.ZU;2-H
Abstract
The first fabrication and RF characterisation of an InGaP/GaAs double heterojunction bipolar transistor in collector-up configuration is rep orted. Boron implantation is used to avoid electron injection into the extrinsic base regions. The InGaP collector offers f(max) = 115GHz an d a high breakdown voltage (BVceo = 27V).