A four-phase handshaking asynchronous static RAM design for self-timed systems

Citation
Vwy. Sit et al., A four-phase handshaking asynchronous static RAM design for self-timed systems, IEEE J SOLI, 34(1), 1999, pp. 90-96
Citations number
24
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SOLID-STATE CIRCUITS
ISSN journal
00189200 → ACNP
Volume
34
Issue
1
Year of publication
1999
Pages
90 - 96
Database
ISI
SICI code
0018-9200(199901)34:1<90:AFHASR>2.0.ZU;2-S
Abstract
The motivation of designing asynchronous memory arises from the recent deve lopment of asynchronous processors. As different from the conventional desi gn, the proposed asynchronous static RAM can 1) communicate with other asyn chronous systems based on a four-phase handshaking control protocol and 2) generate the read/write completion signals with increased average speed by the variable bit-line load concept. The techniques investigated include 1) dual-rail voltage sensing completion detection for read operation and 2) mu ltiple delays completion generation for write operation, In this paper, the performances of these techniques are evaluated for 1-Mb memory with four r egions of bit-line segmentation. The simulated and measured results are pre sented and compared.