Direct extraction of HBT equivalent-circuit elements

Authors
Rudolph, M Doerner, R Heymann, P
Citation
M. Rudolph et al., Direct extraction of HBT equivalent-circuit elements, IEEE MICR T, 47(1), 1999, pp. 82-84
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
ISSN journal
00189480 → ACNP
Volume
47
Issue
1
Year of publication
1999
Pages
82 - 84
Database
ISI
SICI code
0018-9480(199901)47:1<82:DEOHEE>2.0.ZU;2-U
Abstract
We present an analytical method for determining the heterojunction bipolar transistors (HBT's) equivalent-circuit elements. Its special feature is tha t it does not need measurements of test structures nor optimizations. The n ew algorithm for extracting the intrinsic elements exploits the information contained in the frequency dependence of the network parameters, This lead s to a fast algorithm with a unique solution. The method is validated treat ing GaInP/GaAs HBT's.