Record power-added-efficiency, low-voltage GOI (GaAs on insulator) MESFET technology for wireless applications

Authors
Parikh, P Ibbetson, J Mishra, U Docter, D Le, M Kiziloglu, K Grider, D Pusl, J Widman, D Kehias, L Jenkins, T
Citation
P. Parikh et al., Record power-added-efficiency, low-voltage GOI (GaAs on insulator) MESFET technology for wireless applications, IEEE MICR T, 46(12), 1998, pp. 2202-2207
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
ISSN journal
00189480 → ACNP
Volume
46
Issue
12
Year of publication
1998
Part
2
Pages
2202 - 2207
Database
ISI
SICI code
0018-9480(199812)46:12<2202:RPLG(O>2.0.ZU;2-8
Abstract
A record-high power-added efficiency (PAE) is obtained from a GaAs on insul ator (GOT) MESFET, Al2O3 obtained by the wet oxidation of Al0.98GaAs in ste am is used as the insulating buffer layer. The insulating buffer results in elimination of buffer leakage and enhanced charge control. 0.35-mu m gate- length GOI MESFET's exhibiting a record PAE of 72% at a drain voltage of 3 V at 4 GHz are demonstrated.