Analytical model for electrical and thermal transients of self-heating semiconductor devices

Transients of self-heating semiconductor devices are theoretically investig ated based on a feedback circuit model, which is composed of three sub-circ uits describing the isothermal electrical characteristics, thermal impedanc e, and temperature dependence of the electrical characteristics of the devi ces, respectively. Analytical expressions of the frequency and transient re sponses have been derived for both the electrical and thermal characteristi cs of self-heating devices, yielding accurate methods to extract the therma l time constant in both the time and frequency domains. The model is verifi ed by the transient electrical-response measurement of a GaInP/GaAs heteroj unction bipolar transistor.