RF and mechanical characterization of flip-chip interconnects in CPW circuits with underfill

Citation
Zp. Feng et al., RF and mechanical characterization of flip-chip interconnects in CPW circuits with underfill, IEEE MICR T, 46(12), 1998, pp. 2269-2275
Citations number
13
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
ISSN journal
00189480 → ACNP
Volume
46
Issue
12
Year of publication
1998
Part
2
Pages
2269 - 2275
Database
ISI
SICI code
0018-9480(199812)46:12<2269:RAMCOF>2.0.ZU;2-4
Abstract
RF characterization of flip-chip interconnects in coplanar waveguide (CPW) circuits with underfill is reported. The scattering-parameters have been me asured up to 40 GHz for GaAs CPW through-line chips flip-chip mounted on an alumina substrate with and without an underfill epoxy, A lumped-element mo del of flip-chip interconnect has been developed for flip-chip assemblies w ith and without epoxy, Fatigue life of flip-chip assemblies has been comput ed for different chip sizes and substrates. The results show feasibility of using underfill encapsulant in microwave/millimeter-wave frequency range.