80-GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors

Authors
Agarwal, B Lee, Q Mensa, D Pullela, R Guthrie, J Rodwell, MJW
Citation
B. Agarwal et al., 80-GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors, IEEE MICR T, 46(12), 1998, pp. 2302-2307
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
ISSN journal
00189480 → ACNP
Volume
46
Issue
12
Year of publication
1998
Part
2
Pages
2302 - 2307
Database
ISI
SICI code
0018-9480(199812)46:12<2302:8DAWTH>2.0.ZU;2-G
Abstract
We report distributed amplifiers with 80-GHz bandwidth, 6.7-dB mid-band gai n. These amplifiers were fabricated in the transferred-substrate heterojunc tion bipolar transistor integrated circuit technology. Transferred-substrat e HBT's have very high f(max) (>400 GHz) and have yielded distributed ampli fiers with record gain-bandwidth product.