112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers

Authors
Agarwal, B Schmitz, AE Brown, JJ Matloubian, M Case, MG Le, M Lui, M Rodwell, MJW
Citation
B. Agarwal et al., 112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers, IEEE MICR T, 46(12), 1998, pp. 2553-2559
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
ISSN journal
00189480 → ACNP
Volume
46
Issue
12
Year of publication
1998
Part
2
Pages
2553 - 2559
Database
ISI
SICI code
0018-9480(199812)46:12<2553:11A1IH>2.0.ZU;2-Y
Abstract
We report traveling-wave amplifiers having 1-112 GHz bandwidth with 7 dB ga in, and 1-157 GHz bandwidth with 5 dB gain. A third amplifier exhibited 5 d B gain and a 180-GHz high-frequency cutoff. The amplifiers were fabricated in a 0.1-mu m gate length InGaAs/InAlAs HEMT MIMIC technology. The use of g ate-line capacitive-division, cascode gain cells and low-loss elevated copl anar waveguide lines have yielded record bandwidth broad-band amplifiers.