Improved 240-GHz subharmonically pumped planar Schottky diode mixers for space-borne applications

Citation
I. Mehdi et al., Improved 240-GHz subharmonically pumped planar Schottky diode mixers for space-borne applications, IEEE MICR T, 46(12), 1998, pp. 2036-2042
Citations number
18
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
ISSN journal
00189480 → ACNP
Volume
46
Issue
12
Year of publication
1998
Part
1
Pages
2036 - 2042
Database
ISI
SICI code
0018-9480(199812)46:12<2036:I2SPPS>2.0.ZU;2-3
Abstract
Low-noise broad intermediate frequency (IF) band 240-GHz subharmonically pu mped planar Schottky diode mixers for space-borne radiometers have been dev eloped and characterized, The planar GaAs Schottky diodes are fully integra ted with the RF/IF filter circuitry via the quartz-substrate upside-down in tegrated device (QUID) process resulting in a robust and easily handled pac kage, ii best double-sideband-mixer noise temperature of 490 K was achieved with 3 mW of local-oscillator power at 2-GHz IF. Over an IF band of 1.5-10 GHz, the noise temperature is below 1000 K, This state-of-the-art performa nce is attributed to lower parasitic capacitance devices and a low-loss wav eguide circuit, Device fabrication technology and the resulting RF mixer pe rformance obtained in the 200-250-GHz frequency range will be described.