I. Mehdi et al., Improved 240-GHz subharmonically pumped planar Schottky diode mixers for space-borne applications, IEEE MICR T, 46(12), 1998, pp. 2036-2042
Citations number
18
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Low-noise broad intermediate frequency (IF) band 240-GHz subharmonically pu
mped planar Schottky diode mixers for space-borne radiometers have been dev
eloped and characterized, The planar GaAs Schottky diodes are fully integra
ted with the RF/IF filter circuitry via the quartz-substrate upside-down in
tegrated device (QUID) process resulting in a robust and easily handled pac
kage, ii best double-sideband-mixer noise temperature of 490 K was achieved
with 3 mW of local-oscillator power at 2-GHz IF. Over an IF band of 1.5-10
GHz, the noise temperature is below 1000 K, This state-of-the-art performa
nce is attributed to lower parasitic capacitance devices and a low-loss wav
eguide circuit, Device fabrication technology and the resulting RF mixer pe
rformance obtained in the 200-250-GHz frequency range will be described.