A new analytical IGBT model with improved electrical characteristics

Authors
Sheng, KA Finney, SJ Williams, BW
Citation
Ka. Sheng et al., A new analytical IGBT model with improved electrical characteristics, IEEE POW E, 14(1), 1999, pp. 98-107
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON POWER ELECTRONICS
ISSN journal
08858993 → ACNP
Volume
14
Issue
1
Year of publication
1999
Pages
98 - 107
Database
ISI
SICI code
0885-8993(199901)14:1<98:ANAIMW>2.0.ZU;2-J
Abstract
A new analytical insulated gate bipolar transistor (IGBT) model for improve d on-state characteristics prediction is proposed. Two-dimensional (2-D) ef fects in the forward conduction of an IGBT are studied analytically. These effects significantly influence the on-state characteristics of the device and must be accounted for when IGBT modeling. Dynamic characteristics and t emperature effects are included in the model. Both three-dimensional (3-D) numerical simulation and experimental results support the theoretical analy sis.