A new analytical insulated gate bipolar transistor (IGBT) model for improve
d on-state characteristics prediction is proposed. Two-dimensional (2-D) ef
fects in the forward conduction of an IGBT are studied analytically. These
effects significantly influence the on-state characteristics of the device
and must be accounted for when IGBT modeling. Dynamic characteristics and t
emperature effects are included in the model. Both three-dimensional (3-D)
numerical simulation and experimental results support the theoretical analy
sis.