TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-RESISTIVITY OF MOLTEN SILICON

The temperature dependence of the electrical resistivity of molten sil icon was measured based on the direct-current four-probe method in the temperature range from the melting point (1,415 degrees C) to 1,630 d egrees C. The variation of the resistivity in this temperature region was less than 0.7%, which is much smaller than previously reported val ues. The measured resistivity near the solodification point was about 72 x 10(-6) Ohm cm, which is about 8% smaller than previously reported values. The resistivity of molten silicon showed a local minimum in t he range from 1,450 degrees C to 1,500 degrees C. The resistivity of m olten silicon was calculated based on Ziman's formula. The temperature dependence of the measured resistivity was not reproduced when the st ructure factor S(Q) calculated by a simple hard-sphere model was subst ituted into Ziman's formula, but was reproduced by using the experimen tal data of S(Q) measured by Waseda which shows the first peak of asym metric shape. This result suggests that the specific melt structure of molten silicon has a significant effect on the resistivity.