Spectral characteristics of GaAs solar cells grown by LPE

This paper describes the spectral characteristics of GaAs solar cells grown by low-temperature liquid phase epitaxy (LPE). It demonstrates improvement s in blue response and peak internal quantum efficiencies of 100 percent fo r an optimized cell structure with isovalent In doped base and ultrathin (< 100 Angstrom) heavily doped cap p(+)-GaAs layer on the photosensitive surfa ce. The conversion efficiency obtained from the optimized cells under one-s un AM 1.5 conditions is 23.4 percent. Our results indicate that the low-cos t LPE-grown films are suitable for high-efficiency solar cells.