GaInSb photodetectors developed from single crystal bulk grown materials

Authors
Yuan, HX Grubisic, D Wong, TTS
Citation
Hx. Yuan et al., GaInSb photodetectors developed from single crystal bulk grown materials, J ELEC MAT, 28(1), 1999, pp. 39-42
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
28
Issue
1
Year of publication
1999
Pages
39 - 42
Database
ISI
SICI code
0361-5235(199901)28:1<39:GPDFSC>2.0.ZU;2-#
Abstract
GaInSb photodetectors with cutoff wavelengths of 1.9 similar to 2.1 mu m ha s been developed using single crystal bulk grown materials. p(+)-on-n mesa diodes were fabricated by Zn diffusion with anodic oxidation as surface pas sivation. A quantum efficiency as high as 40 similar to 50% over the 0.8 si milar to 1.6 mu m range is obtained. The room temperature shunt resistance is in the range of 10 similar to 50 k Omega for 1 mm size detectors and is limited by bulk generation-recombination current.