GaInSb photodetectors with cutoff wavelengths of 1.9 similar to 2.1 mu m ha
s been developed using single crystal bulk grown materials. p(+)-on-n mesa
diodes were fabricated by Zn diffusion with anodic oxidation as surface pas
sivation. A quantum efficiency as high as 40 similar to 50% over the 0.8 si
milar to 1.6 mu m range is obtained. The room temperature shunt resistance
is in the range of 10 similar to 50 k Omega for 1 mm size detectors and is
limited by bulk generation-recombination current.