EFFECTS OF HIGH-TEMPERATURE ANNEALING ON THE STRUCTURAL AND CRYSTALLINE QUALITIES OF GAAS HETEROEPITAXIAL LAYERS GROWN ON SI SUBSTRATES USING 2-STEP AND DIRECT-METHODS BY MOLECULAR-BEAM EPITAXY
T. Yodo et M. Tamura, EFFECTS OF HIGH-TEMPERATURE ANNEALING ON THE STRUCTURAL AND CRYSTALLINE QUALITIES OF GAAS HETEROEPITAXIAL LAYERS GROWN ON SI SUBSTRATES USING 2-STEP AND DIRECT-METHODS BY MOLECULAR-BEAM EPITAXY, JPN J A P 1, 34(7A), 1995, pp. 3457-3466
The structural and crystalline qualities of GaAs/Si heteroepitaxial la
yers (heteroepilayers) were remarkably improved by annealing at temper
atures above 900 degrees C, independently of the growth methods, eithe
r two-step or direct. The effects of high-temperature annealing on the
optical property, residual strain, and the relation of the improvemen
t in the quality with the out-diffusion of Si from the substrates and
with vacancies in the GaAs heteroepilayers have been systematically in
vestigated by a series of measurements using photoluminescence spectro
scopy, secondary-electron microscopy, double-crystal X-ray diffraction
, secondary-ion mass spectroscopy and cross-sectional transmission ele
ctron microscopy.