THE EFFECT OF TOTAL REACTOR PRESSURE ON GAINSB GROWN ON GD3GA5O12 SUBSTRATE BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

To investigate the possibility of improving the crystal quality of a G aInSb layer grown on a Gd3Ga5O12 substrate by metal organic chemical v apor deposition (MOCVD), experimental studies were carried out on the effect of the total reactor pressure. The lattice constant was affecte d by the pressure. The effect of reducing the pressure was dependent o n the growth temperature. In a low-temperature regime, the lattice con stant increased, and at high temperature it decreased, as the pressure was reduced. The growth rate increased as the pressure was reduced in both temperature regimes. Upon reduction of the pressure, the range o f growth conditions which gives a preferentially (111)-oriented GaInSb layer became narrow.