Electrochemical nanostructuring of n-Si(111) single-crystal faces

Citation
Rt. Potzschke et al., Electrochemical nanostructuring of n-Si(111) single-crystal faces, J ELCHEM SO, 146(1), 1999, pp. 141-149
Citations number
43
Categorie Soggetti
Physical Chemistry/Chemical Physics","Material Science & Engineering
Journal title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN journal
00134651 → ACNP
Volume
146
Issue
1
Year of publication
1999
Pages
141 - 149
Database
ISI
SICI code
0013-4651(199901)146:1<141:ENONSF>2.0.ZU;2-W
Abstract
The local formation and dissolution of low-dimensional phases and small clu sters on foreign substrates plays an important role in modem nanotechnology . This paper deals with the current state of nanostructuring of semiconduct or surfaces by localized electrochemical metal deposition using in situ sca nning tunneling microscopy as a nano-tool. New experimental results of delo calized and localized electrochemical deposition and dissolution of Pb on n -type Si(111) single-crystal surfaces are presented. The influence of surfa ce inhomogeneities on the local metal deposition process is considered. (C) 1999 The Electrochemical Society. S0013-4651(98)05-054-X. All rights reser ved.