Copper indium diselenide (CIS) is electrodeposited in a single step on chem
ical bath deposited cadmium sulfide layers in order to form a superstrate c
ell structure. The influence of the electrodeposition potential on junction
formation is studied by solid-state photocurrent voltage and photocurrent
spectral responses. Secondary ion mass spectroscopy depth profiling shows t
hat cadmium and sulfur diffusion from the CdS layer into the CIS layer is s
mall up to annealing temperatures of 320 degrees C. The diffusion process i
s found to be related to the composition of the CIS film, which in rum is d
etermined by the electrodeposition potential. Interdiffusion processes are
hindered in indium CIS films. A preliminary CTS superstrate cell characteri
stic is presented yielding an efficiency of 1.5%. (C) 1999 The Electrochemi
cal Society. S0013-4651(98)03-073-0. All rights reserved.