Junction formation studies of one-step electrodeposited CuInSe2 on CdS

Citation
A. Kampmann et al., Junction formation studies of one-step electrodeposited CuInSe2 on CdS, J ELCHEM SO, 146(1), 1999, pp. 150-155
Citations number
20
Categorie Soggetti
Physical Chemistry/Chemical Physics","Material Science & Engineering
Journal title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN journal
00134651 → ACNP
Volume
146
Issue
1
Year of publication
1999
Pages
150 - 155
Database
ISI
SICI code
0013-4651(199901)146:1<150:JFSOOE>2.0.ZU;2-C
Abstract
Copper indium diselenide (CIS) is electrodeposited in a single step on chem ical bath deposited cadmium sulfide layers in order to form a superstrate c ell structure. The influence of the electrodeposition potential on junction formation is studied by solid-state photocurrent voltage and photocurrent spectral responses. Secondary ion mass spectroscopy depth profiling shows t hat cadmium and sulfur diffusion from the CdS layer into the CIS layer is s mall up to annealing temperatures of 320 degrees C. The diffusion process i s found to be related to the composition of the CIS film, which in rum is d etermined by the electrodeposition potential. Interdiffusion processes are hindered in indium CIS films. A preliminary CTS superstrate cell characteri stic is presented yielding an efficiency of 1.5%. (C) 1999 The Electrochemi cal Society. S0013-4651(98)03-073-0. All rights reserved.