Optimized process conditions for high quality gate oxides on SIMOX SOI substrates

The quality of thin gate oxides grown on separation-by-implantation-of-oxyg en silicon-on-insulator (SIMOX SOI) was investigated. The early-failure-rat e of gate oxides in optimized SIMOX SOI has been as low as in bulk referenc e samples. Samples with low oxygen dose (4 x 10(17)/cm(2)) and relatively s low (1 degrees C/min) postimplantation anneal ramp up rate exhibited the be st gate oxides. Surface roughness (up to 1 nm with 20 x 20 mu m scanned are a) and SOI film thickness (150-230 nm) showed almost no impact on the early failure rate of the gate oxides on SIMOX SOI. (C) 1999 The Electrochemical Society. S0013-4651(98)04-026-9. All rights reserved.