Investigation of the mechanical strength of hydrogen-annealed Czochralski silicon wafers

The mechanical strength of hydrogen-annealed Czochralski silicon (H-2-annea led) wafers was investigated with emphasis on the generation of slip disloc ations by oxide precipitates. Thermal stress, which was far larger than tha t generated in actual device processes, was applied to H-2-annealed wafers after thermal simulation of a low-temperature process (low-temperature simu lation) or a high-temperature process (high-temperature simulation). It was found that slip generation by oxide precipitates did not occur in the case of the low-temperature simulation, while many slip dislocations were gener ated in the case of the high-temperature simulation. The:experimental resul ts can be explained by the effect of precipitate size on slip generation. I t was concluded that H-2-annealed wafers have no mechanical strength proble ms during actual low-temperature processes. (C) 1999 The Electrochemical So ciety. S0013-4651(98)03-008-0. All rights reserved.