HETEROEPITAXIAL GROWTH OF TUNGSTEN CARBIDE FILMS ON W(110) BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

Authors
KATOH M KAWARADA H
Citation
M. Katoh et H. Kawarada, HETEROEPITAXIAL GROWTH OF TUNGSTEN CARBIDE FILMS ON W(110) BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 34(7A), 1995, pp. 3628-3630
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
34
Issue
7A
Year of publication
1995
Pages
3628 - 3630
Database
ISI
SICI code
Abstract
Tungsten carbide (WC) layers have been grown epitaxially on tungsten s ingle crystals for the first time by using microwave plasma and electr on cyclotron resonance plasma carburization of single-crystalline tung sten. WC on tungsten is grown epitaxially as (0001)WC//(110)W in the a lignment [1 (2) over bar 10]WC//[(1) over bar 11]W.