Identifying the forces responsible for self-organization of nanostructuresat crystal surfaces

Citation
K. Pohl et al., Identifying the forces responsible for self-organization of nanostructuresat crystal surfaces, NATURE, 397(6716), 1999, pp. 238-241
Citations number
20
Categorie Soggetti
Multidisciplinary,Multidisciplinary,Multidisciplinary
Journal title
NATURE
ISSN journal
00280836 → ACNP
Volume
397
Issue
6716
Year of publication
1999
Pages
238 - 241
Database
ISI
SICI code
0028-0836(19990121)397:6716<238:ITFRFS>2.0.ZU;2-V
Abstract
The spontaneous formation of organized surface structures at nanometre scal es(1,2) has the potential to augment or surpass standard materials patterni ng technologies. Many observations of self-organization of nanoscale cluste rs at surfaces have been reported(1-10), but the fundamental mechanisms und erlying such behaviour-and in particular, the nature of the forces leading to and stabilizing self-organization-are not well understood. The forces be tween the many-atom units in these structures, with characteristic dimensio ns of one to tens of nanometres, must extend far beyond the range of typica l interatomic interactions. One commonly accepted source of such mesoscale forces is the stress field in the substrate around each unit(1,11-13). This , however, has not been confirmed, nor have such interactions been measured directly. Here we identify and measure the ordering forces in a nearly per fect triangular lattice of nanometre-sized vacancy islands that forms when a single monolayer of silver on the ruthenium (0001) surface is exposed to sulphur at room temperature. By using time-resolved scanning tunnelling mic roscopy to monitor the thermal fluctuations of the centres of mass of the v acancy islands around their final positions in the self-organized lattice, we obtain the elastic constants of the lattice and show that the weak force s responsible for its stability can be quantified. Our results are consiste nt with general theories of strain-mediated interactions between surface de fects in strained films.