Mj. Shyu et al., HIGHLY (100)-ORIENTED THIN-FILMS OF SOL-GEL DERIVED PB[(MG1 3NB2/3)(0.675)TI-0.325]O-3 PREPARED ON TEXTURED LANIO3 ELECTRODE/, JPN J A P 1, 34(7A), 1995, pp. 3647-3653
Highly (100)-oriented thin films of Pb[(Mg1/3Nb2/3)(0.675)Ti-0.325]O-3
(PMNT) were fabricated by sol-gel method on (100)-textured LaNiO3 (LN
O) metallic oxide electrode. The textured LaNiO3 layer was prepared by
rf magnetron sputtering at 250 degrees C on Si, SiO2/Si or Pt/Ti/SiO2
/Si substrates. A well orientation match was found between the PMNT an
d LNO layers. The annealing temperature for obtaining a pure perovskit
e PMNT film was reduced for about 50 degrees C by using the LNO-coated
substrates comparing to that without. A well-developed grain structur
e was also formed for the former. Satisfactory dielectric and ferroele
ctric characteristics were observed from the (100)-oriented PMNT thin
films prepared at 700 degrees C on LNO, as compared to the randomly or
iented one on Pt electrode. However, an increase of annealing temperat
ure would cause a more serious out-diffusion of LNO which gradually de
teriorated the property of PMNT films deposited on LNO.