HIGHLY (100)-ORIENTED THIN-FILMS OF SOL-GEL DERIVED PB[(MG1 3NB2/3)(0.675)TI-0.325]O-3 PREPARED ON TEXTURED LANIO3 ELECTRODE/

Citation
Mj. Shyu et al., HIGHLY (100)-ORIENTED THIN-FILMS OF SOL-GEL DERIVED PB[(MG1 3NB2/3)(0.675)TI-0.325]O-3 PREPARED ON TEXTURED LANIO3 ELECTRODE/, JPN J A P 1, 34(7A), 1995, pp. 3647-3653
Citations number
19
Categorie Soggetti
Physics, Applied
Volume
34
Issue
7A
Year of publication
1995
Pages
3647 - 3653
Database
ISI
SICI code
Abstract
Highly (100)-oriented thin films of Pb[(Mg1/3Nb2/3)(0.675)Ti-0.325]O-3 (PMNT) were fabricated by sol-gel method on (100)-textured LaNiO3 (LN O) metallic oxide electrode. The textured LaNiO3 layer was prepared by rf magnetron sputtering at 250 degrees C on Si, SiO2/Si or Pt/Ti/SiO2 /Si substrates. A well orientation match was found between the PMNT an d LNO layers. The annealing temperature for obtaining a pure perovskit e PMNT film was reduced for about 50 degrees C by using the LNO-coated substrates comparing to that without. A well-developed grain structur e was also formed for the former. Satisfactory dielectric and ferroele ctric characteristics were observed from the (100)-oriented PMNT thin films prepared at 700 degrees C on LNO, as compared to the randomly or iented one on Pt electrode. However, an increase of annealing temperat ure would cause a more serious out-diffusion of LNO which gradually de teriorated the property of PMNT films deposited on LNO.