TRANSPARENCY OF BAND-GAP-SHIFTED INGAASP INP QUANTUM-WELL WAVE-GUIDES/

Authors
HE JJ KOTELES ES DAVIS M POOLE PJ DION M FENG Y CHARBONNEAU S PIVA P BUCHANAN M GOLDBERG R MITCHELL I
Citation
Jj. He et al., TRANSPARENCY OF BAND-GAP-SHIFTED INGAASP INP QUANTUM-WELL WAVE-GUIDES/, Canadian journal of physics, 74, 1996, pp. 32-34
Citations number
9
Categorie Soggetti
Physics
Journal title
Canadian journal of physics → ACNP
ISSN journal
00084204
Volume
74
Year of publication
1996
Supplement
1
Pages
32 - 34
Database
ISI
SICI code
0008-4204(1996)74:<32:TOBIIQ>2.0.ZU;2-1
Abstract
The properties of band-gap-shifted InGaAsP/InP quantum-well waveguides were investigated. A 90 nm blue-shift of the band gap was obtained by phosphorus ion implantation followed by rapid thermal annealing. It w as shown that the absorption constant at the original band edge was re duced from 110 to only 4 cm(-1). No waveguide excess loss was observed due to the QW-intermixing process. Good electrical properties of the pin diode were also maintained.