SCHOTTKY CONTACTS TO GAXIN1-XP BARRIER ENHANCEMENT LAYERS ON INP AND INGAAS

In our investigations, Au, Al, Ni, Pt, Ti, and combinations thereof we re deposited on InP and InGaAs by e-beam evaporation to form Schottky contacts. The Schottky-barrier heights of these diodes determined by f orward I-V and (or) reverse C-V measurements lie between 0.38-0.48 eV. To increase the Schottky-barrier height, a strained GaxIn1-xP layer w as inserted between the electrode metal(s) and the semiconductor. This material, which has a band-gap larger than InP, was grown by gas-sour ce molecular beam epitaxy. The Schottky-barrier heights, which general ly depend on the gallium fraction, x, and the thickness of the straine d GaxIn1-xP layer, increase and are in the range of 0.56-0.65 eV in di fferent contact schemes.