SIMULATION AND PHYSICAL RESPONSE OF NEGATIVE TEMPERATURE-COEFFICIENT OF RESISTANCE POLYSILICON MICROMACHINED STRUCTURES

We present experimental and simulation results for polysilicon microma chined devices with a negative temperature coefficient of resistance. These were fabricated by a CMOS process with a customized sheet resist ance for the second polysilicon layer. We first obtained an expression for the device resistivity, and then employed our simulation procedur e to analyze both the steady-state and the time-varying response. The thermal efficiency is also examined Explicit comparisons between simul ation and experimental results show excellent agreement.