A NOVEL N(-POLYSILICON ON N-SILICON ISO-TYPE DIODE())

We report the results of fabricating n(+)-n iso-type diodes using in-s itu phosphorus-doped polysilicon films on n-type 1 Ohm cm <100> Si sub strates. The electrical characteristics of this structure give evidenc e of the presence of an energy barrier at the film-substrate interface reminiscent of Schottky-barrier diodes. The current-voltage character istics show exponential behavior over three decades of current. An ide ality factor of 1.2 is extracted from the experimental results. An ene rgy barrier height of about 0.2 eV is obtained from the current-temper ature analysis.