A COMPARISON OF THE DC AND RF CHARACTERISTICS OF SINGLE AND DOUBLE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/

Authors
MCKINNON WR MCALISTER SP ABID Z GUZZO EE LAFRAMBOISE S
Citation
Wr. Mckinnon et al., A COMPARISON OF THE DC AND RF CHARACTERISTICS OF SINGLE AND DOUBLE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Canadian journal of physics, 74, 1996, pp. 239-242
Citations number
8
Categorie Soggetti
Physics
Journal title
Canadian journal of physics → ACNP
ISSN journal
00084204
Volume
74
Year of publication
1996
Supplement
1
Pages
239 - 242
Database
ISI
SICI code
0008-4204(1996)74:<239:ACOTDA>2.0.ZU;2-A
Abstract
The dc and rf characteristics for InP/InGaAs heterojunction bipolar tr ansistors having a single heterojunction design were measured and comp ared with those for double heterojunction devices that employ a compos ite collector. Although the composite-collector design improves the br eakdown characteristics of our devices the rf performance was not as g ood. This we partially attribute to the collector heterojunction, whic h causes ''current blocking''.