Surface states of electrified binary semiconductors

Citation
Sg. Davison et al., Surface states of electrified binary semiconductors, PROG SURF S, 59(1-4), 1998, pp. 225-232
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PROGRESS IN SURFACE SCIENCE
ISSN journal
00796816 → ACNP
Volume
59
Issue
1-4
Year of publication
1998
Pages
225 - 232
Database
ISI
SICI code
0079-6816(199809/12)59:1-4<225:SSOEBS>2.0.ZU;2-L
Abstract
Using the recursive-Green-function (RGF) technique, we investigate the surf ace states of an electrified binary semiconductor, modelled by a chain of a lternating s and p orbitals. The RGF provides the surface density of states (SDOS), which displays a quasi-Stark-ladder distribution of the energy lev els in the two bands at the surface atom. The SDOS are discussed in terms o f the applied-field and surface-perturbation parameters.