X-ray reflection from self-organized interfaces in an SiGe/Si multilayer

Interface morphology of a strained SiGe/Si multilayer has been investigated by means of non-specular x-ray reflection. Depending on the azimuth of the scattering plane, two types of interface pattern have been observed, namel y an asymmetrical random staircase and symmetrical islands superimposed on it. The distribution of the scattered intensity in reciprocal space has bee n simulated using a structure model of self-similar interface patterns and the distorted-wave Born approximation. The parameters of the interfaces fol lowing from the fit of the measured and simulated data were compared with t he results of high-resolution x-ray diffractometry and transmission electro n microscopy, and a good correspondence has been achieved.