Neutron irradiation-infrared based measurement method for interstitial oxygen in heavily boron-doped silicon

A novel method, based on an infrared absorption and neutron irradiation tec hnique, has been developed for the determination of interstitial oxygen in heavily boron-doped silicon. The new procedure utilizes fast neutron irradi ated silicon wafer specimens. On fast neutron irradiation, the free carrier s of high concentration in silicon can be trapped by the irradiated defects and the resistivity increased. The resulting calibration curve for the mea surement of interstitial oxygen in boron-doped silicon has been established on the basis of the annealing behaviour of irradiated boron-doped CZ silic on.