Hydrogen molecules in boron-doped crystalline silicon

Citation
Re. Pritchard et al., Hydrogen molecules in boron-doped crystalline silicon, SEMIC SCI T, 14(1), 1999, pp. 77-80
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
1
Year of publication
1999
Pages
77 - 80
Database
ISI
SICI code
0268-1242(199901)14:1<77:HMIBCS>2.0.ZU;2-S
Abstract
Boron-doped, float zone silicon has been hydrogenated at 1300 degrees C and then quenched to room temperature. Infrared absorption measurements of the samples in their as-quenched state and following anneals at 160 degrees C reveal the vibrational mode from H-B pairs, together with the line that we have assigned to the vibrational mode of isolated hydrogen molecules (nu(3) HH = 3618 cm(-1)). Annealing leads to irreversible increases in the concent rations of H-B pairs and decreases in the concentration of nu(3HH) centres. The results imply that H-2 molecules diffuse to boron accepters and that t here is subsequent dissociation of these molecules with the formation of H- B pairs. The measurements confirm an earlier proposal that 'hidden hydrogen ' present in such samples is in the form of isolated molecules.