Dynamical DX centre breakdown in submicrometre AlGaAs/GaAs structures

Authors
Dargys, A Zurauskiene, N Goovaerts, E Van Hoof, C Borghs, G
Citation
A. Dargys et al., Dynamical DX centre breakdown in submicrometre AlGaAs/GaAs structures, SEMIC SCI T, 14(1), 1999, pp. 81-84
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
1
Year of publication
1999
Pages
81 - 84
Database
ISI
SICI code
0268-1242(199901)14:1<81:DDCBIS>2.0.ZU;2-P
Abstract
Dynamical electrical breakdown in the depleted Al0.3Ga0.7As region of p(+)- i-n(+) diodes has been investigated in the nanosecond timescale. A persiste nt conductivity due to Si-related DX centre impact ionization in high elect ric fields was observed after the onset of the breakdown. From the present investigation it follows that DX centre breakdown begins at electric fields of (1.8 +/- 0.4) x 10(5) V cm(-1) and is related to impact ionization of D X centres by free hot carriers.