Temperature dependence of the band-edge exciton of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs

Authors
Chen, HJ Lin, DY Huang, YS Tu, RC Su, YK Tiong, KK
Citation
Hj. Chen et al., Temperature dependence of the band-edge exciton of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs, SEMIC SCI T, 14(1), 1999, pp. 85-88
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
1
Year of publication
1999
Pages
85 - 88
Database
ISI
SICI code
0268-1242(199901)14:1<85:TDOTBE>2.0.ZU;2-P
Abstract
We have measured the temperature dependence of the spectral features near t he direct bandgap of a Zn0.88Mg0.12S0.18Se0.82 film, grown by molecular bea m epitaxy on a (001) GaAs substrate, in the temperature range between 15 an d 300 K using contactless electroreflectance. The parameters that describe the temperature variations of the energy and broadening function of the ban d-edge exciton have been evaluated.