Magnetic field effect on radiative recombination of localized carriers at GaAs/AlGaAs heterointerface

Authors
Astakhov, GV Kiselev, AA Kochereshko, VP Moiseeva, MM Platonov, AV
Citation
Gv. Astakhov et al., Magnetic field effect on radiative recombination of localized carriers at GaAs/AlGaAs heterointerface, SEMIC SCI T, 14(1), 1999, pp. 110-113
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
1
Year of publication
1999
Pages
110 - 113
Database
ISI
SICI code
0268-1242(199901)14:1<110:MFEORR>2.0.ZU;2-3
Abstract
The polarized photoluminescence from localized interface states in a GaAs/A lGaAs single heterojunction have been studied as a function of magnetic hel d in Faraday geometry. A theoretical model of carrier trapping into these i nterface states has been developed. The effect of magnetic field on the spe ctra is discussed in terms of the field-dependent carrier trapping into the tail of localized states.