An analytical model for silicon MIS/IL solar cells to optimize cell parameters through thermal annealing

Authors
Al Seod, AKA Saleh, MB Soliman, MM Attala, ME
Citation
Aka. Al Seod et al., An analytical model for silicon MIS/IL solar cells to optimize cell parameters through thermal annealing, SOL EN MAT, 55(4), 1998, pp. 303-312
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
55
Issue
4
Year of publication
1998
Pages
303 - 312
Database
ISI
SICI code
0927-0248(199811)55:4<303:AAMFSM>2.0.ZU;2-U
Abstract
A model has been developed which simulates the effect of cell parameters in order to optimize them by controlling the fabrication conditions, namely, annealing time and annealing temperature. Calculation of the efficiency as a function of surface states density D-it, positive fixed oxide charge dens ity Q(f) and mobile charge density Q(m), that depend on anealing conditions are carried out. A compromise between D-it and Q(m) for different anealing temperatures for high performance cells has been investigated. (C) 1998 El sevier Science B.V. All rights reserved.