Ribbon growth on substrate (RGS) silicon solar cells with microwave-induced remote hydrogen plasma passivation and efficiencies exceeding 11%

Citation
M. Spiegel et al., Ribbon growth on substrate (RGS) silicon solar cells with microwave-induced remote hydrogen plasma passivation and efficiencies exceeding 11%, SOL EN MAT, 55(4), 1998, pp. 331-340
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
55
Issue
4
Year of publication
1998
Pages
331 - 340
Database
ISI
SICI code
0927-0248(199811)55:4<331:RGOS(S>2.0.ZU;2-W
Abstract
For the first time efficiencies above 11% for solar cells (4 cm(2)) based o n Bayer ribbon growth on substrate (RCS) crystalline silicon have been demo nstrated including mechanical V-structuring of the front surface, aluminum- gettering, microwave-induced remote hydrogen plasma (MIRHP) passivation and PECVD SiN/SiO2 double-layer antireflection coating. MIRHP alone resulted i n absolute improvements in the open-circuit voltage of 27 mV, in the short- circuit current density of 2.8 mA cm(-2) and in the cell efficiency of 1.9% leading to an open-circuit voltage of 538 mV and an efficiency of 11.1%. ( C) 1998 Elsevier Science B.V. All rights reserved.