Characterization of a charge-coupled-device detector in the 1100-0.14-nm (1-eV to 9-keV) spectral region

Citation
L. Poletto et al., Characterization of a charge-coupled-device detector in the 1100-0.14-nm (1-eV to 9-keV) spectral region, APPL OPTICS, 38(1), 1999, pp. 29-36
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
APPLIED OPTICS
ISSN journal
00036935 → ACNP
Volume
38
Issue
1
Year of publication
1999
Pages
29 - 36
Database
ISI
SICI code
0003-6935(19990101)38:1<29:COACDI>2.0.ZU;2-D
Abstract
The performances of a CCD detector have been evaluated in a wide spectral r egion, which ranges from the near IR to the soft x ray. Four different expe rimental setups have been used: a Czerny-Turner monochromator for the 1100- 250-nm region, a normal-incidence Johnson-Onaka monochromator for the 250-3 0-nm region, a grazing-incidence Rowland monochromator for the 30-0.27-nm r egion, and a test facility with broadband filters for the 0.27-0.14-nm regi on. The CCD is thinned and backilluminated, with a 512 x 512 format and 24 mu m X 24 mu m pixels. The quantum efficiency was measured in the 1100-0.14 -nm (1-eV to 9-keV) region, and the uniformity of response was in the 1100- 58-nm (1-21-eV) region. Contamination effects in the vacuum UV range are al so discussed. (C) 1999 Optical Society of America.