ELECTRON-TUNNELING EXPERIMENTS ON SPIN-GLASS NI1-XMNX FILMS

Systematic tunneling measurements have been performed on A/Al oxide/Ni 1-xMnx junctions to study the one-particle density of states in spin g lass Ni1-xMnx (x = 0.24-0.35) films where the lattice and spin disorde rs coexist. The strong zero bias conductance anomaly indicating the me tal-insulator transition was observed at a critical concentration x(c) approximate to 0.24. This is the direct evidence that the variation o f the tunneling conductance is largely due to the magnetic disorder. ( C) 1997 Elsevier Science Ltd.