The hydrogentated surface of silicon exhibits remarkable properties, but po
or resistance to oxidation. To improve its stability, surface hydrogen has
been replaced by several organic groups. Such grafting can be carried out c
hemically by a multi-step reaction scheme. However, an electrochemical appr
oach allows direct reaction with the hydrogenated surface. The porous-silic
on surface has been partially methoxylated by a controlled anodic dissoluti
on. If has also been methylated using a non-destructive anodic process, wit
h a yield of 80%, limited only by steric hindrance. The methylated surface
of porous silicon exhibits a stability against oxidation increased by an or
der of magnitude.