The deposition of Pb and PbO on various substrates by MOCVD using a new trinuclear lead precursor

Citation
R. Hedinger et al., The deposition of Pb and PbO on various substrates by MOCVD using a new trinuclear lead precursor, CHEM VAPOR, 5(1), 1999, pp. 29-35
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMICAL VAPOR DEPOSITION
ISSN journal
09481907 → ACNP
Volume
5
Issue
1
Year of publication
1999
Pages
29 - 35
Database
ISI
SICI code
0948-1907(199901)5:1<29:TDOPAP>2.0.ZU;2-5
Abstract
The synthesis and characterization of the trinuclear, uncharged and volatil e lead(II) complex [Pb-3(H-(3)tdci)(2)]. 5H(2)O (tdci = 1,3,5-trideoxy-1,3, 5-tris(dimethylamino)-cis-inositol) is described. Despite its rather high m olecular weight, this compound can be used as a precursor for the depositio n of thin films of lead and lead(II) oxide by metal organic chemical vapor deposition (MOCVD). Experiments were carried out under reduced pressure in a temperature range of 450-550 degrees C, using stainless steel, copper, an d copper-, silver-, and gold-coated silicon as substrates, showing a prefer ential deposition on conducting substrates. The nature of the deposited fil ms was analyzed.