Near room-temperature continuous-wave operation of electrically pumped 1.55 mu m vertical cavity lasers with InGaAsP/InP bottom mirror

Authors
Rapp, S Salomonsson, F Bentell, J Sagnes, I Moussa, H Meriadec, C Raj, R Streubel, K Hammar, M
Citation
S. Rapp et al., Near room-temperature continuous-wave operation of electrically pumped 1.55 mu m vertical cavity lasers with InGaAsP/InP bottom mirror, ELECTR LETT, 35(1), 1999, pp. 49-50
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
1
Year of publication
1999
Pages
49 - 50
Database
ISI
SICI code
0013-5194(19990107)35:1<49:NRCOOE>2.0.ZU;2-9
Abstract
The first near room-temperature continuous-wave (CW) operation of a vertica l cavity laser based on an epitaxial InGaAsP/InP bottom mirror is reported. The structure employs a package of nine strain compensated GaInAsP quantum wells and a wafer-fused GaAs/AlGaAs top mirror. For a 10 mu m diameter dev ice, the threshold current is 6mA and the input threshold power is 21 mW. T he maximum operating temperature is 17 and 101 degrees C for CW and pulsed conditions, respectively.