Se. Laux et K. Hess, Revisiting the analytic theory of p-n junction impedance: Improvements guided by computer simulation leading to a new equivalent circuit, IEEE DEVICE, 46(2), 1999, pp. 396-412
We revisit the analytic derivation of the de and low frequency ac behavior
of the p-n step junction and suggest all preexisting treatments are flawed
for three important reasons, First, not all contributions to the diode curr
ent are included. We derive a rigorous expression for each component of cur
rent that can be used to judge the completeness of existing analytic theori
es. Additionally, wrong boundary conditions for minority carrier concentrat
ions and incorrect equivalent circuit topologies undermine present analytic
theories of the diode. We propose a new analytic equivalent circuit model
which institutes correct boundary conditions. The resulting circuit model d
emonstrates excellent de and ac accuracy for symmetric and asymmetric junct
ions, for long, short, or intermediate base regimes, Inductive behavior ass
ociated with short base diodes at large forward bias is reproduced, as is t
he decrease in capacitance observed in long base diodes. The assumptions an
d limitations of our new circuit model are thoroughly investigated.